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Morgan Ware

Assistant Professor, Electrical Engineering

  • Semiconductors
  • Crystal growth
  • Electronic materials
  • Nanostructures
  • Nanomaterials for Quantum computing / Quantum cryptography
  • Optical materials

ELEG 3933 Circuits & Electronics (Sp 2016)

ELEG 587V Electronic Materials (Fa 2016)

69.    X-ray Reciprocal Space Mapping of Graded AlxGa1−xN Films and Nanowires, H. V. Stanchu, A. V. Kuchuk, V. P. Kladko, M. E. Ware, Y. I. Mazur, Z. R. Zytkiewicz, A. E. Belyaev and G. J. Salamo, Nanoscale Res. Lett. 11, 81 (2016). http://dx.doi.org/10.1186/s11671-016-1299-7

 

68.    Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures, V. P. Kladko, A.Kuchuk, ?.V. Naumov, N.V. Safriuk, S. B. Kriviy, H.V. Stanchu, A. E. Belyaev, A. F. Kolomys, V.V. Strelchuk, B.S. Yavich, Yu. I. Mazur, M. E. Ware, G. J. Salamo, Physica E 76, 140 (2016). http://dx.doi.org/10.1016/j.physe.2015.10.022

 

67.    Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots, Linlin Su, Baolai Liang, Ying Wang, Qinglin Guo, Shufang Wang, Guangsheng Fu, Zhiming M. Wang, Yuriy I. Mazur, Morgan E. Ware and Gregory J. Salamo, Appl. Phys. Lett. 107, 183107 (2015). http://dx.doi.org/10.1063/1.4935161

 

66.    Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures, Marianna Kovalova, Serhiy Kondratenko, Artem Yakovlev, Colin Furrow, Vasyl Kunets, Morgan Ware, Gregory Salamo, Proc. SPIE 9519, Nanotechnology VII, 95190W (June 1, 2015); http://dx.doi.org/10.1117/12.2178684

 

65.    Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1-xN Heterostructures on GaN/Sapphire (0001) Substrate, Andrian V. Kuchuk, Petro M. Lytvyn, Chen Li, Hryhorii V. Stanchu, Yuriy I. Mazur, Morgan E. Ware, Mourad Benamara, Renata Ratajczak, Vitaliy Dorogan, Vasyl P. Kladko, Alexander E. Belyaev, and Gregory J. Salamo, ACS Appl. Mater. Interfaces, 7, 23320 (2015). http://dx.doi.org/10.1021/acsami.5b07924

 

64.    Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux, M. Benamara, Y. I. Mazur, P. Lytvyn, M. E. Ware, V. Dorogan, X. Hu, L. D. de Souza, E. Marega, M. Theodores, G. Marques,  G. J. Salamo, Mater. Res. Soc. Symp. Proc. Vol. 1792, pg. 537 (2015).

 

63.    Measuring the depth profiles of strain and composition in AlGaN-graded layer by high-resolution x-ray diffraction, A.V. Kuchuk, H.V. Stanchu, Chen Li, M.E. Ware, Yu.I. Mazur, V.P. Kladko, A.E. Belyaev, G.J. Salamo, J. Appl. Phys., 116, 224302 (2014). http://dx.doi.org/10.1063/1.4904083

 

62.    Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains, S. V. Kondratenko, O. V. Vakulenko, Yu. I. Mazur, V. G. Dorogan, E. Marega Jr., M. Benamara, M. E. Ware, G. J. Salamo, J. Appl. Phys. 116, 193707 (2014).

 

61.    Band filling effects on temperature performance of intermediate band quantum wire solar cells, Kunets, V.P.; Furrow, C.S.; Ware, M.E.; de Souza, L.D.; Benamara, M.; Mortazavi, M.; Salamo, G.J., J. Appl. Phys. 116, 083102 (2014). http://dx.doi.org/10.1063/1.4893898

 

60.    Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap, Yerino, C.D.; Simmonds, P.J.; Baolai Liang; Dorogan, V.G.; Ware, M.E.; Mazur, Y.I.; Daehwan Jung; Huffaker, D.L.; Salamo, G.J.; Lee, M.L., Appl. Phys. Lett. 105, 071912 (2014).

 

59.    Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures,    S.L. Golovynskyi, Yu.I. Mazur, Zh.M. Wang, M.E. Ware, O.V. Vakulenko, G.G. Tarasov, G.J. Salamo, Phys. Lett. A 378(35), 2622 (2014).

 

58.    Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas flux, P. M. Lytvyn, Yu. I. Mazur, M. Benamara, M. E. Ware, V. G. Dorogan, L. D. de Souza, E. Marega, Jr., M. D. Teodoro, G. E. Marques and G. J. Salamo, Appl. Surf. Sci. 305, 689 (2014). http://dx.doi.org/10.1016/j.apsusc.2014.03.171

 

57.    Mechanism of strain influenced quantum well thickness reduction in GaN/AlN short-period superlattices, Kuchuk, Andrian; Klad’ko, V; Petrenko, Taras; Bryksa, V; Belyaev, A; Mazur, Yuriy; Ware, Morgan; DeCuir Jr., Eric; Salamo, Gregory, Nanotechnology 25, 245602 (2014). http://dx.doi.org/10.1088/0957-4484/25/24/245602

 

56.    Low temperature magneto-photoluminescence of GaAsBi/GaAs quantum well heterostructures, Yu. I. Mazur, M. D. Teodoro, L. Dias de Souza, M. E. Ware, D. Fan, S.-Q. Yu, G. G. Tarasov, G. E. Marques and G. J. Salamo, J. Appl. Phys 115, 123518, (2014). http://dx.doi.org/10.1063/1.4869803

 

55.    Spatial distribution of free carrier concentration in vertical GaN Gunn-diode structures studied by confocal micro-Raman spectroscopy and Kelvin probe force microscopy, V. V. Strelchuk1, A. S. Nikolenko, P. M. Lytvyn, A. S. Romanyuk, Yu. I. Mazur, M. E. Ware, E. A. DeCuir, Jr, G. J. Salamo, and A. E. Belyaev, Phys. Status Solidi C 11, 269 (2014).

 

54.    Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix /GaAs heterostructures, Mazur, Yuriy; Dorogan, Vitaly; de Souza, Leonardo; Fan, Dongsheng; Benamara, Mourad; Schmidbauer, Martin; Ware, Morgan; Tarasov, Georgiy; Yu, Shui-Qing; Marques, Gilmar; Salamo, Gregory, Nanotechnology 25, 035702 (2014). http://dx.doi.org/10.1088/0957-4484/25/3/035702

 

53.    Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy, A E Belyaev, V V Strelchuk, A S Nikolenko, A S Romanyuk, Yu I Mazur, M E Ware, E A DeCuir Jr and G J Salamo, Semicond. Sci. Technol. 28, 105011 (2013). http://dx.doi.org/10.1088/0268-1242/28/10/105011

 

52.    Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures, Yu. I. Mazur, V. G. Dorogan, E. Marega Jr., D. Guzun, M. E. Ware, Z. Ya. Zhuchenko, G. G. Tarasov, C. Lienau, and G. J. Salamo, J. Appl. Phys. 113, 034309 (2013).

 

51.    Effects of spatial confinement and layer disorder in photoluminescence of GaAs1–xBix/GaAs heterostructures, Yu I Mazur, V G Dorogan, M Benamara, M E Ware, M Schmidbauer, G G Tarasov, S R Johnson, X Lu, S-Q Yu, T Tiedje and G J Salamo, J. Phys. D: Appl. Phys. 46 065306 (2013).

 

50.    High Performance Quantum Well Micro-Hall Device for Current Sensing in Inverters, Thomas White, Vasyl P. Kunets, Yusuke Hirono, Morgan E. Ware, H. Alan Mantooth, Gregory J. Salamo, IEEE Trans. Electron Devices, 20, 1 (2013). http://dx.doi.org/10.1109/pedg.2013.6785606

 

49.    Electron transport in quantum dot chains: Dimensionality effects and hopping conductance, Vasyl P Kunets, Mariama Rebello Sousa Dias, Thomas Rembert, Morgan E Ware, Yuriy I. Mazur, Victor Lopez-Richard, H. Alan Mantooth, Gilmar Eugenio Marques, Gregory J. Salamo, J. Appl. Phys. 113, 183709 (2013).

 

48.    Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures, D. Guzun, Yu. I. Mazur, V. G. Dorogan, M. E. Ware, E. Marega, Jr., G. G. Tarasov, C. Lienau, and G. J. Salamo, J. Appl. Phys. 113, 154304 (2013). http://dx.doi.org/10.1063/1.4801891

 

47.    Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples, Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, M. E. Ware, S.-Q. Yu, T. Tiedje, and G. J. Salamo, J. Appl. Phys. 113, 144308 (2013). http://dx.doi.org/10.1063/1.4801429

 

46.    Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101, 122103 (2012)],Shibin Li, Morgan Ware, Jiang Wu, Paul Minor, Zhiming Wang, Zhiming Wu, Gregory J.Salamo , Yadong Jiang, Appl. Phys. Lett. 102, 099901 (2013).

 

45.    Site-controlled formation of InGaAs quantum nanostructures – tailoring the dimensionality and the quantum confinement, Baolai Liang, Ping-Show Wong, Thai Tran, Vitaliy G. Dorogan, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Chih-Kang Shih, Diana L. Huffaker  , Nano Research, DOI: 10.1007/s12274-013-0299-5 (2013).

 

44.    Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures, Yu. I. Mazur, V. G. Dorogan, E. Marega, Jr., D. Guzun, M. E. Ware, Z. Ya. Zhuchenko, G. G. Tarasov, C. Lienau, and G. J. Salamo, Appl. Phys. Lett. 113, 034309 (2013). http://dx.doi.org/10.1063/1.4779686

 

43.    State filling dependent luminescence in hybrid tunnel coupled dot–well structures, Yuriy I. Mazur, Vitaliy G. Dorogan, Morgan E. Ware, Euclydes Marega Jr, Mourad Benamara, Zoryana Ya. Zhuchenko, Georgiy G. Tarasov, Christoph Lienau and Gregory J. Salamo, Nanoscale, 2012, 4(23), 7509-7516.

 

42.    Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN, Shibin Li, Morgan Ware, Jiang Wu, Paul Minor, Zhiming Wang, Zhiming Wu, Gregory J. Salamo, Yadong Jiang, Appl. Phys. Lett. 101, 122103 (2012). http://dx.doi.org/10.1063/1.4753993

 

41.    Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures, Yu. I. Mazur, V. G. Dorogan, M. E. Ware, E. Marega Jr., P. M. Lytvyn, Z. Ya. Zhuchenko, G. G. Tarasov, and G. J. Salamo, J. Appl. Phys. 112, 053711 (2012).

 

40.    Polarization doping: reservoir effects of the substrate in AlGaN graded layers, Shibin Li, Morgan E. Ware, Jiang Wu, Vasyl P. Kunets, Mike Hawkridge, Paul Minor, Zhiming Wang, Zhiming Wu, Yadong Jiang, Gregory J. Salamo, J. Appl. Phys. 112, 053711 (2012). http://dx.doi.org/10.1063/1.4750039

 

39.    Photoconductivity pecularities in InGaAs quantum wire heterostrcutures: anisotropy and high photoresponsivity at room temperature, S V Kondratenko, O V Vakulenko, Vas P Kunets, Yu I Mazur, V G Dorogan, M E Ware and G J Salamo, Semicond. Sci. Technol. 27 105024 (2012).

 

38.    InGaAs quantum wire intermediate band solar cell, Vas. P. Kunets, C. S. Furrow, T. Al. Morgan, Y. Hirono, M. E. Ware, V. G. Dorogan, Yu. I. Mazur, V. P. Kunets, and G. J. Salamo, Appl. Phys. Lett. 101, 041106 (2012).

 

37.    Substrate effects on the strain relaxation in GaN/AlN short-period superlattices, V. P. Kladko, A. V. Kuchuk, P. M. Lytvyn, O. M. Yefanov, N. V. Safriuk, A. E. Belyaev, Yu. I. Mazur, E. A. DeCuir, M. E. Ware and G. J. Salamo, Nanoscale Research Letters (2012) 7:289. http://dx.doi.org/10.1186/1556-276x-7-289

 

36.    Polarization induced doping in graded AlGaN films, Shibin Li, Morgan E. Ware, Vasyl P. Kunets, Mike Hawkridge, Paul Minor, Jiang Wu, Gregory J. Salamo, Phys. Status Solidi C 8, No. 7–8, 2182–2184 (2011). http://dx.doi.org/10.1002/pssc.201001072

 

35.    Confocal Raman depth-profile analysis of the electrical and structural properties in III-nitride structures, V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, M. Ya. Valakh, A.E. Belyaev, Yu. I. Mazur, M.E. Ware, E.A. DeCuir, Jr., and G. J. Salamo, Phys. Status Solidi C 8, No. 7–8, 2188–2190 (2011).

 

34.    Isotropic Hall effect and “freeze-in” of carriers in the InGaAs self-assembled quantum wires, Vas. P. Kunets, S. Prosandeev, Yu. I. Mazur, M. E. Ware, M. D. Teodoro, V. G. Dorogan, P. M. Lytvyn, and G. J. Salamo, J. Appl. Phys. 110, 083714 (2011).

 

33.    Confocal Raman depth-scanning spectroscopic study of phonon-plasmon modes in GaN epilayers, V. V. Strelchuk, V. P. Bryksa, K. A. Avramenko, M. Ya. Valakh, A. E. Belyaev, V. Lashkaryov , Yu. I. Mazur, M. E. Ware, E. A. DeCuir, Jr., and G. J. Salamo, J. Appl. Phys. 109, 123528 (2011).

 

32.    Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study, V P Kladko, A V Kuchuk, N V Safryuk, V F Machulin, P M Lytvyn, V G Raicheva, A E Belyaev, Yu I Mazur, E A DeCuir Jr, M E Ware, M O Manasreh and G J Salamo, J. Phys. D: Appl. Phys. 44, 025403 (2011).

 

31.    Interface roughness scattering in laterally coupled InGaAs quantum wires, Vas. P. Kunets, M. D. Teodoro, V. G. Dorogan, P. M. Lytvyn, G. G. Tarasov, R. Sleezer, M. E. Ware, Yu. I. Mazur, J. S. Krasinski, and G. J. Salamo, Appl. Phys. Lett. 97, 262103 (2010).

 

30.    Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures, Yu. I. Mazur, V. G. Dorogan, E. Marega, Jr., Z. Ya. Zhuchenko, M. E. Ware, M. Benamara, G. G. Tarasov, P. Vasa, C. Lienau, and G. J. Salamo, J. Appl. Phys. 108, 074316 (2010). http://dx.doi.org/10.1063/1.3493240

 

29.    Fabrication of regular arrays of gold nanospheres by thermal transformation of electroless-plated films, Wonmi Ahn, Phillip Blake, John Shultz, Morgan E. Ware, and D. Keith Roper, J. Vac. Sci. Technol. B 28(3), 638 (2010).

 

28.    Morphology of strained and relaxed SiGe layers grown on high index Si substrates,  M. E. Ware and R. J. Nemanich, Thin Solid Films 518, 1990 (2010). http://dx.doi.org/10.1016/j.tsf.2009.07.186

 

27.    Tuning the emission profiles of various self-assembled InxGa1−xAs nanostructures by rapid thermal annealing, Jihoon H. Lee, Zhiming M. Wang, Vitaliy G. Dorogan, Yuiry I. Mazur, Morgan E. Ware, and Gregory J. Salamo, J. Appl. Phys 106, 073106 (2009)

 

26.    Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples, V. G. Dorogan, Yu. I. Mazur, E. Marega, Jr., G. G. Tarasov, M. E. Ware, and G. J. Salamo, J. Appl. Phys. 105, 124304 (2009).

 

25.    Characteristics of Lateral Transport in In0.35Ga0.65As/GaAs Quantum Dot Heterostructures with Variation of Size, Shape and Density of Quantum Dots, Vasyl P. Kunets, Morgan E Ware, Peter M. Lytvyn, Yuriy I. Mazur, Georgiy G. Tarasov, Volodymyr P. Kunets, Gregory J. Salamo, in Material Science for Quantum Information Processing Technologies, edited by M. Fanciulli, J. Martinis, M. Eriksson (Mater. Res. Soc. Symp. Proc. Volume 1117E, Warrendale, PA, 2009), 1117-J04-07.

 

24.    Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition, P M Lytvyn, Yu I Mazur, E Marega Jr, V G Dorogan, V P Kladko, M V Slobodian, V V Strelchuk, M L Hussein, M E Ware and G J Salamo, Nanotechnology 19, 505605 (2008), http://dx.doi.org/10.1088/0957-4484/19/50/505605

 

23.    Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy, Vasyl Kunets, Timothy Morgan , Yu Mazur , Vitaliy Dorogan , Peter Lytvyn , Morgan Ware , D. Guzun , John Shultz , Gregory Salamo, J. Appl. Phys. 104, 103709 (2008). http://dx.doi.org/10.1063/1.3020532

 

22.    Thermal peculiarity of AlAs-capped InAs quantum dots in a GaAs matrix,  Vitaliy Dorogan, Yu Mazur , Jihoon Lee, Zhiming Wang , Morgan Ware , Gregory Salamo, J. Appl. Phys. 104, 104303 (2008)

 

21.    Spectroscopic Observation of Developing InAs Quantum Dots on GaAs Ring-Like -Nanostructured Templates, Yu. I. Mazur, Z. Y. Abu Waar, T. D. Mishima, J. H. Lee, G.G. Tarasov, B. L. Liang, V. G. Dorogan, M. E. Ware, Zh. M. Wang, M. B. Johnson, and G. J. Salamo, J. Appl. Phys. 104, 044310 (2008)

 

20.    Super-low-density InGaAs semiconductor ring-shaped nanostructures, Jihoon H. Lee, Zhiming M. Wang, Morgan E. Ware, Kushal C. Wijesundara, Mauricio Garrido, Eric. A. Stinaff, Gregory J. Salamo, Cryst. Growth Des, 8, 1945 (2008). http://dx.doi.org/10.1021/cg701263c

 

19.    Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures,  B. L. Liang, Z. M. Wang, Y. I. Mazur, S. Seydmohamadi, M. E. Ware, and G. J. Salamo,  Opt. Express 15, 8157-8162 (2007).

 

18.    Spin interactions in InAs quantum dots and molecules, Doty MF, Ware ME, Stinaff EA, Scheibner M, Bracker AS, Ponomarev IV, Badescu SC, Korenev VL, Reinecke TL  Gammon D, Physica Status Solidi B 243, 3859 (2006).

 

17.    Theory of spin states in coupled quantum dots, Ponomarev IV, Scheibner M, Stinaff EA, Bracker AS, Doty MF, Badescu SC, Ware ME, Korenev VL, Reinecke TL, Gammon D, Physica Status Solidi B 243, 3869 (2006).

 

16.    Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices,  E. A. DeCuir, Jr., Emil Fred, B. S. Passmore, A. Muddasani, M. O. Manasreh, Jinqiao Xie, Hadis Morkoç, M. E. Ware, and G. J. Salamo, Appl. Phys. Lett. 89, 151112 (2006).

 

15.    Optical signatures of coupled quantum dots,  E.A. Stinaff, M. Scheibner, A.S. Bracker, I.V. Ponomarev, V.L. Korenev, M.E. Ware, M.F. Doty, T.L. Reinecke, D. Gammon, Science 311, 636 (2006). http://dx.doi.org/10.1126/science.1121189

 

14.    Polarized fine structure in the excitation spectrum of a negatively charged quantum dot,  M.E. Ware, E.A. Stinaff, D. Gammon, M.F. Doty, A.S. Bracker, D. Gershoni, V.L. Korenev, S.C. Badescu, Y. Lyanda-Geller, T.L. Reinecke, Phys. Rev. Lett. 95, 177403 (2005). http://dx.doi.org/10.1103/PhysRevLett.95.177403

 

13.    Self-assembled Ge dots and dashes on SiGe/Si superlattices,  Lena Fitting, M. E. Ware, J. R. Haywood, Jennifer J. Huening and R. J. Nemanich, J. Appl. Phys. 98, 024317 (2005). http://dx.doi.org/10.1063/1.1993751

 

12.    Binding energies of positive and negative trions:  from quantum wells to quantum dots,  A. S. Bracker, E. A. Stinaff, D. Gammon, M. E. Ware, J. G. Tischler, D. Park, D. Gershoni, A. V. Filinov and M. Bonitz, F. Peeters, C. Riva, Phys. Rev. B 72, 035332 (2005). http://dx.doi.org/10.1103/PhysRevB.72.035332

 

11.    Electrical Spin Pumping of Quantum Dots at Room Temperature,  C. H. Li, G. Kioseoglou, A. T. Hanbicki, O. M. J. van ‘t Erve, M. E. Ware, D. Gammon, R. M. Stroud and B. T. Jonker, R. Mallory, M. Yasar and A. Petrou, Appl. Phys. Lett. 86, 132503 (2005). http://dx.doi.org/10.1063/1.1890469

 

10.    Polarization spectroscopy of positive and negative trions in an InAs quantum dot,  Morgan Ware, Allan Bracker, Eric Stinaff, Daniel Gammon, David Gershoni, Vladimir Korenev,  Physica E 26, 55 (2005).

 

9.       Optical pumping of electronic and nuclear spin in single charge-tunable quantum dots,  A. S. Bracker, E. A. Stinaff, D. Gammon, M. E. Ware, J. G. Tischler, A. Shabaev, Al. L. Efros, D. Park, D. Gershoni, V. L. Korenev, I. A. Merkulov, Phys. Rev. Lett. 94, 047402 (2005). http://dx.doi.org/10.1103/PhysRevLett.94.047402

 

8.       Suppression of Dyakonov-Perel Spin Relaxation in high mobility n GaAs,  R.I. Dzhioev, K.V. Kavokin, V.L. Korenev, M.V. Lazarev, N.K. Poletaev, B.P. Zakharchenya, E. Stinaff, D. Gammon, A.S. Bracker, M.E. Ware, Phys. Rev. Lett. 93, 216402 (2004).

 

7.       Analysis of a non-orthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates,  M. E. Ware, R. J. Nemanich, J. L. Gray, R. Hull, J. Appl. Phy. 95, 115-122 (2004). http://dx.doi.org/10.1063/1.1630362

 

6.       Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots, M.E. Ware, A. Bracker, D. Gammon, D. Gershoni, Mat. Res. Soc. Symp. Proc.Vol. 789, 137-142 (2004).

 

5.       Wavelength-dependent Raman Scattering of Hydrogenated Amorphous Silicon Carbon (a-Si:C:H) with Red, Green and Blue (RGB) light excitation,  Minseo Park, V. Sakhrani, J-P. Maria, J.J. Cuomo, C.W. Teng, J.F. Muth, M.E. Ware, B.J. Rodriguez, R.J. Nemanich, J. Mater. Res. 18, 768, (2003).

 

4.       Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates, Morgan E. Ware and Robert J. Nemanich, Mat. Res. Soc. Symp. Proc. 648 (2001).

 

3.       Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL  D. Gracin, V. Borjanovic, B. Vlahovic, A. Sunda-Meya, T.M. Patterson, J.M. Dutta, S. Hauger, I. Pinayev, M.E. Ware, D. Alexson, R.J. Nemanich, Nucl. Instrum. Methods Phys. Res., Sect. A 475 635-9, (2001).

 

2.       Stress Relaxation In Uniquely Oriented SiGe/Si Epitaxial Layers, M. E. Ware and R. J. Nemanich, Thin Films:  Stresses and Mechanical Properties VIII, Editors:  R. Vinci, O. Kraft, N. Moody, P. Besser, E. Shaffer II, Mat. Res. Soc. Symp. Proc. 594 (2000).

 

1.       Effects of vortex-vortex interactions on ion-track pinning in high-T-c superconductors, Gray KE, Steel DG, Hettinger JD, Miller DJ, Washburn BR, Ware M, Parkman JT, Yoder ME, Moreau C, Eddy MM, IEEE Transactions on Applied Superconductivity, 7, 1987-92 (1997).

Morgan Ware

Contact

Morgan Ware
meware@uark.edu
Assistant Professor, Electrical Engineering
479-575-3670

Education

  • B.S., Physics and Mathematics, Florida State University, Tallahassee, Florida
  • Ph.D., Physics, North Carolina State University, Ralleigh, North Carolina